发明名称 FIELD EMITTER BASED ELECTRON SOURCE WITH MINIMIZED BEAM EMITTANCE GROWTH
摘要 A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.
申请公布号 US2009245468(A1) 申请公布日期 2009.10.01
申请号 US20080055536 申请日期 2008.03.26
申请人 ZOU YUN;CAO YANG;INZINNA LOUIS PAUL;NECULAES VASILE BOGDAN 发明人 ZOU YUN;CAO YANG;INZINNA LOUIS PAUL;NECULAES VASILE BOGDAN
分类号 H01J35/04;H01J29/48 主分类号 H01J35/04
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