PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to prevent damage due to etching of a phase change material layer. CONSTITUTION: A first electrode(410) is formed inside a first insulation layer(400) formed on a semiconductor substrate(100), and penetrates the first insulation layer. A plurality of trenches is extended into a first direction in order to expose the first electrode. A mold insulation layer having the trenches is formed on the first insulation layer. A phase change material layer(600) is formed on the mold insulation layer, is filled in the trenches, and is commonly connected with the first electrode. A second electrode line pattern(700) is formed on the phase change material layer, and is extended into a second direction different from the first direction.