| 摘要 |
PURPOSE: A method of manufacturing the semiconductor device is provided to reduce the manufacturing process of the semiconductor device of high aspect. CONSTITUTION: The method of manufacturing the semiconductor device comprises as follows. The conductive film is formed on the semiconductor substrate(100) having a lower substructure. The hard mask film is formed on the conductive film. The nano mold having the nano pattern is aligned on the surface of the hard mask film. A recess for exposing a conductive layer is formed by patterning the hard mask corresponding to the nano pattern. The insulating layer is formed by filling an insulating material between the recess, the hard mask and the nano mold. The conductive film is exposed by removing the insulating layer corresponding to the nano pattern. The conductive pattern(110a) is formed by patterning the conductive film using the insulating layer as the etching mask.
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