| 摘要 |
PURPOSE: A sintered body for p-type ZnO compound semiconductors and a method for manufacturing a thin film and thick film using the same are provided for use in light-emitting elements and electric components. CONSTITUTION: A sintered body for p-type ZnO compound semiconductors is obtained by mixing ZnO and a second compound molecule. The second compound molecule contains one or more materials selected from the group consisting of lithium oxide(Li2O), lithium fluoride(LiF), lithium chloride(LiCl), sodium oxide(Na2O), sodium fluoride(NaF), sodium chloride(NaCl), kalium oxide(K2O), potassium fluoride(KF), potassium chloride(KCl), trivalent metal oxide able to coexist with divalent metal oxide, and divalent metal oxide able to coexist with the univalent metal oxide.
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