| 摘要 |
A method for manufacturing a pixel structure includes forming a first conductive layer on a substrate and patterning the first conductive layer with use of a first mask as an etching mask to form a gate. A dielectric layer is formed over the substrate to cover the gate. A semiconductor material layer is formed on the dielectric layer and patterned with use of the first mask as an etching mask to form a semiconductor layer on the dielectric layer. A second conductive layer is formed over the substrate and patterned with use of a second mask as an etching mask to form a source/drain over the substrate. A third conductive layer is formed over the substrate and patterned with use of a third mask as an etching mask to form a pixel electrode over the substrate. The pixel electrode is electrically connected to the drain.
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