| 摘要 |
In a wafer heating apparatus having an electrostatic attraction function, a conductive heat generating layer is formed on one plane of a supporting substrate, and a conductive electrode for electrostatic attraction is formed on the other plane, and furthermore, an insulating layer is formed to cover the heat generating layer and the electrode for electrostatic attraction. The wafer heating apparatus has the electrostatic attraction function characterized in that the insulating layer covering the electrode for electrostatic attraction has a lower surface resistivity (rhosE) in a portion on the side of an object to be attracted compared with a surface resistivity (rhosE) in a portion on the side of the electrostatic attraction electrode.
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