SEMICONDUCTOR STORAGE DEVICE, MEMORY CELL ARRAY, SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD, AND DRIVE METHOD

摘要

Provided is a semiconductor storage device which can simultaneously realize the high reliability and the cell area reduction. A selection electrode (106) is formed to sandwich a p-type semiconductor region (102) and an insulating film (105). Moreover, a first n-type semiconductor region (103) and a second n-type semiconductor region (104) are formed inside the p-type semiconductor region (102) at the both sides of the selection electrode (106). The first n-type semiconductor region (103) is connected to a first resistance-changing layer (107) while the second n-type semiconductor region (104) is connected to a second resistance-changing layer (109). Moreover, the second resistance-changing layer (109) is connected to a first wiring layer (108) while the second resistance-changing layer (109) is connected to a second wiring layer (110).