| 摘要 |
<p>PURPOSE: A mask used in extreme ultraviolet lithography and a manufacturing method thereof are provided to transfer a fine pattern with high definition on a wafer through an extreme ultraviolet lithography process. CONSTITUTION: A reflecting layer(200) is formed on a substrate(100), and reflects an extreme ultraviolet light. A half tone absorbing layer pattern(310) is formed on the reflecting layer, and exposes a part of the reflecting layer. A part of the extreme ultraviolet light is absorbed. The other part of the extreme ultraviolet light is emitted. A capping layer for protecting the reflecting layer is formed on the reflecting layer.</p> |
