| 摘要 |
<p>PURPOSE: A method of manufacturing photomask for double exposure patterning lithography is provided to minimize the registration error. CONSTITUTION: The first photomask is exposed(402). The first photomask is a photomask for the double exposure patterning lithography(DPL) within the exposure equipment. The set value of the exposure equipment is amended by measuring the registration error of the first photomask. The second photomask is exposed. The second photomask is a photomask for the double exposure patterning lithography(DPL) within the exposure equipment set to the corrected set value.</p> |
