| 摘要 |
<p>PURPOSE: A polycrystalline silicon manufacturing apparatus is provided to reduce the penetration hole by forming electrodes at the lower board part of a furnace. CONSTITUTION: The silicon cored bar(4) extended top and bottom is formed in the lower board part(2) of a furnace electrode. The source gas is supplied within a furnace. The silicon cored bar is heated by flowing current in the silicon cored bar from an electrode. The poly-crystal silicon is segregated in the surface of the silicon cored bar by the source gas. A part of electrodes is formed by double electrodes(5B). The double content electrode has a pair of electrode holder. The electrode holder is formed by the insertion state within the penetration hole formed in the lower board part. The cored bar maintenance unit is formed on the top end portion of the electrode holder. The coolant path(40) along which the cooling medium circulates is formed in the electrode holder. The cooling pipe line for in the coolant path is connected to the bottom part of the electrode holder.</p> |
