| 摘要 |
PURPOSE: A method for manufacturing semiconductor device is provided to protect the gate sidewall from the attack due to the Ar gas in the high density plasma chemical vapor deposition. CONSTITUTION: The semiconductor substrate(110) is provided. The oxidation process is performed on the conductive film side wall. The element isolation film(130) is formed by filling insulating layers(120,122,124) in the trench. In the element isolation region(F) of the semiconductor substrate, the trench is formed. In the active area(A) of the semiconductor substrate, the tunnel insulating layer(112) and the first conductive film(114) are formed.
|
