| 摘要 |
A gas treatment apparatus is provided with a chamber (40) for storing a wafer (W); a transfer mechanism (17) for transferring works to be treated to the chamber (40) one by one; a gas supply mechanism for supplying the chamber (40) with an adsorptive gas for performing gas treatment to the wafer (W); and a control section (90) for introducing the treatment gas into the chamber prior to carrying the first work into the chamber, and controlling the gas supply mechanism and the transfer mechanism to carry the first work into the chamber after a prescribed time. |
