发明名称 METHOD OF FORMING MASK FOR LITHOGRAPHY, METHOD OF FORMING MASK DATA FOR LITHOGRAPHY, METHOD OF MANUFACTURING BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE, BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
摘要 PURPOSE: A method of forming a mask for lithography, a method of forming mask data for lithography, method of manufacturing a back-illuminated solid-state imaging device, a back-illuminated solid-state imaging device and an electronic device are provided to manufacture a solid-state imaging device which can deal with the back-illuminated type, not distinguished from the front-illuminated type by being applied on an electric device using a solid-state imaging device in an image taking unit as the solid-state imaging device. CONSTITUTION: A unit pixel includes a photodiode(31) which is a photoelectric conversion element, and four transistors, for example, a transfer transistor(32), a reset transistor(33), an amplification transistor(34) and a selection transistor(35). A transfer control line, a reset control line and a selection control line are arranged for controlling driving of the transfer transistor, the reset transistor and the selection transistor.
申请公布号 KR20090102642(A) 申请公布日期 2009.09.30
申请号 KR20090020266 申请日期 2009.03.10
申请人 SONY CORPORATION 发明人 MABUCHI KEIJI
分类号 G06F1/00;G03F1/68;G06F9/00;G06K19/07;H01L27/146;H04N5/335;H04N5/341;H04N5/353;H04N5/369;H04N5/374 主分类号 G06F1/00
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