摘要 |
PURPOSE: A method of forming a mask for lithography, a method of forming mask data for lithography, method of manufacturing a back-illuminated solid-state imaging device, a back-illuminated solid-state imaging device and an electronic device are provided to manufacture a solid-state imaging device which can deal with the back-illuminated type, not distinguished from the front-illuminated type by being applied on an electric device using a solid-state imaging device in an image taking unit as the solid-state imaging device. CONSTITUTION: A unit pixel includes a photodiode(31) which is a photoelectric conversion element, and four transistors, for example, a transfer transistor(32), a reset transistor(33), an amplification transistor(34) and a selection transistor(35). A transfer control line, a reset control line and a selection control line are arranged for controlling driving of the transfer transistor, the reset transistor and the selection transistor. |