PURPOSE: An inductively-coupled plasma etching apparatus is provided to minimize the variation of high frequency power distribution occurring in a reaction chamber due to an etching by-product deposited un-uniformly according to the rotation direction of an insulated plate. CONSTITUTION: An inductively-coupled plasma etching apparatus includes a reaction chamber, an antenna system and an insulating plate. The reaction chamber provides a space where plasma is generated. An antenna system(150) induces the electric field that generates the plasma by prepared in the upper part of the reaction chamber. The insulating plate is placed between the reaction chamber and the antenna system, and the antenna system includes first and second lower antennas and first and second upper antennas.
申请公布号
KR20090102257(A)
申请公布日期
2009.09.30
申请号
KR20080027584
申请日期
2008.03.25
申请人
TAINICS CO., LTD.;KIM, NAM JIN;PARK, JONG HO
发明人
KIM, JEONG TAE;CHO, HO YONG;KIM, HA JONG;KIM, GWANG TAE;PARK, JONG HO;KIM, NAM JIN