| 摘要 |
<p>PURPOSE: A magnetic resistance effect device and a magnetic random access memory are provided to have large capacitance while performing the writing rapidly. CONSTITUTION: A magnetic resistance effect device(1) includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer, and a second non-magnetic layer. The first ferromagnetic layer has magnetization at right angles to the plane of the layer. The second ferromagnetic layer has the magnetization at right angels to the plane of the layer. The first non-magnetic layer(10b) is interposed between the first ferromagnetic layer(10a) and the second ferromagnetic layer(10c). The third ferromagnetic layer is provided to the opposite side to the second ferromagnetic layer from the first non-magnetic layer. The third ferromagnetic layer has the variable magnetization in parallel to the layer. The second non-magnetic layer is interposed between the second ferromagnetic layer and the third ferromagnetic layer. A spin-polarized electron is injected to the second ferromagnetic layer by flowing the current in a direction at right angles to the layer between the first ferromagnetic layer and the third ferromagnetic layer. The precession is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electron to the third ferromagnetic layer from the second ferromagnetic layer through the second non-magnetic layer. A microwave magnetic field corresponding to the precession is induced to the second ferromagnetic layer.</p> |
