| 摘要 |
<p>PURPOSE: A semiconductor memory and its producing method are provided to save the cost and simplify the process for forming the voltage sense amplifier. CONSTITUTION: The method of manufacturing the semiconductor memory is provided. The ultra thin body(50) is formed on the semiconductor substrate(10) to trap electrons and holes(70). The step for forming the ultra thin body includes the step to form the sub-Si layer on the semiconductor substrate and the step to form the metal oxide layer on the sub-Si layer. The hole storage region(51) which stores the holes trapped inside the ultra thin body is formed.</p> |
