| 摘要 |
<p>PURPOSE: An organic thin film transistor preventing a short channel effect regardless of a channel length, a manufacturing method thereof, and a thin film transistor array substrate including the same are provided to suppress an organic semiconductor surface or internal current by forming a current blocking unit in a channel of an organic semiconductor layer. CONSTITUTION: An organic thin film transistor includes a source electrode(500), a drain electrode, an organic semiconductor layer(400), a gate electrode(200), and a gate insulating layer(300). The source electrode and the drain electrode are separated. The organic semiconductor layer contacts with the source electrode and the drain electrode. The organic semiconductor layer forms a channel between the source electrode and the drain electrode. The gate electrode is insulated with the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. A current blocking unit is formed in the channel of the organic semiconductor layer to prevent the current flow in a channel surface side.</p> |
