| 摘要 |
PURPOSE: A semiconductor device and method of manufacturing the same are provided to suppress the operation such as the bipolar transistor. CONSTITUTION: The semiconductor device includes the device isolation film(120), the device forming region(110), and the channel forming region(180), the gate insulating layer(130), the gate electrode(140), the second conductive type high density impurity spreading layer(170), and low concentration impurity spreading layer(160). The device isolation film is formed in the first conductivity type semiconductor layer. The device forming area is divided by the device isolation film. The gate insulating layer is located on the channel forming region. The second conductive type high density impurity spreading layer is formed in the device forming region. The second conductive type low concentration impurity spreading layer is formed in the device forming region.
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