| 摘要 |
PURPOSE: A thin film photodiode and display device is provided to detect small illuminance by increasing photo current in the depletion layer. CONSTITUTION: The thin film photodiode includes a substrate, the thin film cell part, and the micro lens(19). The thin film cell part includes the semiconductor layer(131), the second semiconductor layer(132), and the third semiconductor layer(133). The semiconductor layer is made of the P-type semiconductor formed on the substrate. The second semiconductor layers are made of the P-type semiconductor or the I -type semiconductor. The third semiconductor layers are made of the n-type semiconductor layer. The micro lens is formed on the thin film cell part.
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