发明名称 |
SILICON GERMANIUM BIPOLAR TRANSISTOR |
摘要 |
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron. |
申请公布号 |
PL203317(B1) |
申请公布日期 |
2009.09.30 |
申请号 |
PL20010362710 |
申请日期 |
2001.11.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU JACK OON;COOLBAUGH DOUGLAS DUANE;DUNN JAMES STUART;GREENBERG DAVID;HARAME DAVID;JAGANNATHAN BASANTH;JOHNSON ROBB ALLEN;LANZEROTTI LOUIS;SCHONENBERG KATHRYN TURNER;WUTHRICH RYAN WAYNE |
分类号 |
H01L21/331;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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