| 摘要 |
PURPOSE: A plasma processing apparatus and method for feedback-controlling plasma processing apparatus are provided to supply uniformly the high frequency power to a susceptor. CONSTITUTION: The plasma processing apparatus includes the process chamber, the susceptor(105), the feeding bar(B1,B2,B3), and the radio frequency power. The susceptor is prepared inside the process chamber. The processed article is mounted in a susceptor. The feeding bar is electrically connected to a susceptor in the power feed point. The radio frequency power is connected to the feeding bars. The radio frequency power supplies the high frequency power to a susceptor through the feeding bars.
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