METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a pattern of a uniform line width without a defect like a pattern bridge in a mat edge part of DRAM. CONSTITUTION: A first mask layer(113) and a second mask pattern are formed in an upper part of the etched layer of the substrate. A spacer(123) is formed in the side wall of the second mask pattern. A spacer pattern of the line and space structure is formed in the pad pattern forming region of the mat by removing the second mask pattern.