| 摘要 |
<p>PURPOSE: A thin-film semiconductor device and method for manufacturing the same are provided to prevent damage and to form the stable sidewall. CONSTITUTION: The thin film semiconductor device includes the transparent insulated substrate(10), the island-type semiconductor layer, and the gate insulating layer and gate electrode(18), the side wall spacer, and the interlayer insulating film. The island-type semiconductor layer is formed in the transparency insulating substrate. The island-type semiconductor layer has the source(29) and drain region(30). The side wall spacer is the trilaminar structure of the first oxide film, the nitride film and the second oxide film. The interlayer insulating film covers the island-type semiconductor layer and gate electrode.</p> |
