OPERATING METHOD OF MEMORY DEVICE REDUCING LATERAL MOVEMENT OF CHARGES

摘要

PURPOSE: A method for operating a memory device is provided to implement a negative valid effect test voltage below 0 V while applying the voltage of 0V or more to a control gate of the memory cell. CONSTITUTION: A pre-program voltage is applied to a memory cell of an erase state(S110). The memory cell is pre-programmed to have a smaller threshold voltage distribution in comparison with the erase state. Whether the memory cell is pre-programmed is verified using the negative valid verification voltage(S130).