| 摘要 |
<p>Method for producing transistor structure The invention relates to a method for fabricating a transistor structure, comprising at least a first and a second bipolar transistor having different collector widths. The invention is distinguished by the fact that all junctions between differently doped regions have a sharp interface. In this case, by way of example, a first collector region 2.1 is suitable for a high- frequency transistor with high limiting frequencies fT and a second collector region 2.2 is suitable for a high-voltage transistor with increased breakdown voltages. Figure 3c</p> |
