PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD THEREOF

摘要

PURPOSE: A plasma etching device and a plasma etching method are provided to improve brightness of a light emitting device or a flat display by forming a lens shaped pattern on a substrate. CONSTITUTION: A plasma etching apparatus includes a reactive chamber, an antenna, and a chuck. The reactive chamber provides the space in which the plasma is generated. An antenna is prepared in the upper part of the reactive chamber and a source power is applied to the antenna. The chuck is prepared in the reactive chamber and the bias power is applied to the chuck. A plasma etching process is performed by applying a first source power and a first bias power to the antenna and the chuck respectively(S121). The plasma etching process is performed by applying a second source power and a second bias power to the antenna and the chuck(S122). The plasma etching process is performed by applying a third source power and a third bias power to the antenna and the chuck(S123).