发明名称 |
Method of fabricating chrome-less phase shift mask |
摘要 |
An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.
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申请公布号 |
US7595136(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20060325149 |
申请日期 |
2006.01.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON GI-SUNG;SHIN IN-KYUN;KIM SUNG-HYUCK |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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