发明名称 |
Method for forming a coating film on a facet of a semiconductor laser diode |
摘要 |
The present invention is to provide a method for producing a semiconductor laser diode (LD) with an enhanced ESD resistance. The method includes a step for forming an aluminum film on a facet of the LD and a step for forming an aluminum oxide film on the aluminum film. The underlying aluminum film is oxidized during the formation of the aluminum oxide film to form a double aluminum oxide layer. The ratio of the oxide composition of the underlying aluminum oxide film is smaller than that of the upper aluminum oxide film.
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申请公布号 |
US7596162(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20070896457 |
申请日期 |
2007.08.31 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LTD. |
发明人 |
FUKUDA CHIE;ICHIKAWA HIROYUKI |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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