发明名称 |
Semiconductor memory devices and methods of forming the same |
摘要 |
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film on the insulating layer and surrounding the charge storage region. A body region of the first conductivity type is on an upper surface of the charge storage region, and a gate stack including a gate electrode and a gate insulating film is on the body region. A source region and a drain region of a second conductivity type are on opposite sides of the body region. The charge storage region extends further towards the semiconductor substrate than the source region and/or the drain region. Methods of forming semiconductor memory devices are also disclosed.
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申请公布号 |
US7595532(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20070649074 |
申请日期 |
2007.01.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG KI-WHAN;KIM CHANG-HYUN |
分类号 |
H01L27/01;H01L29/792 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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