| 摘要 |
The semiconductor memory device includes a plurality of bank groups each including a plurality of banks sharing one of a plurality of global input/output line groups, a data input unit configured to transfer external data to data input global lines in response to write commands corresponding to the respective bank groups, a data output unit configured to output data applied on data output global lines to an external circuit in response to read commands corresponding to the respective bank groups, and a data transfer unit configured to transfer data applied on the data input global lines to one of the plurality of global input/output line groups in response to the write commands, and to transfer data applied on one of the plurality of global input/output line groups to the data output global lines in response to the read commands.
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