SUB-LITHOGRAPHIC INTERCONNECT PATTERNING USING SELF-ASSEMBLING POLYMERS

摘要

The present invention is directed to the formation of sublithographic features in a semi conduct or structure using self-assembling polymers The self-assembling polymers are formed in openings in a hard mask, annealed and then etched, followed by etching of the underlying dielectric material. At least one subiithograpliic feature is formed according to this method. Abo disclosed is an intermediate semiconductor structure in which at least one interconnect wiring feature has a dimension that is defined by a self-assembled block copolymer.