| 摘要 |
Provided is a bonding structure of a bonding wire, which solves problems of conventional technologies in practical application of a double layer copper bonding wire, has improved formability and bondability of a ball section, improved bonding strength of wedge connection and is excellent in industrial productivity. A method for forming such bonding structure is also provided. The bonding wire has copper as a main component, and an increased concentration layer having a high concentration of a conductive metal other than cupper is formed on a ball bonding section. The increased concentration layer is formed at the vicinity of the surface of the ball boding section or on an interface of the ball bonding section. The thickness of a region having a conductive metal concentration of 0.05-20mol% is preferably 0.1μm or more, and the conductive metal concentration of the increased concentration layer is preferably approximately five times the average concentration of the conductive metal at the ball bonding section other than that on the increased concentration layer. |
