| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can improve reliability of the laser element. SOLUTION: This nitride-based semiconductor laser element (semiconductor laser element) 1000 is provided with: in the order close to a light emitting surface 1, a first alteration prevention layer 40 being a dielectric multilayered film formed with an AlN film 41, an Al<SB>2</SB>O<SB>3</SB>film 42 and an AlN film 43; and an Al<SB>2</SB>O<SB>3</SB>film 51 formed on a surface of the first alteration prevention layer 40 on the side opposite to the light emitting surface 1 side. When the length of laser light isλ, and the refractive indexes of the AlN film 41, the Al<SB>2</SB>O<SB>3</SB>film 42 and the AlN film 43 are n1, n2 and n3, respectively, the thickness t1 of the AlN film 41, the thickness t2 of the Al<SB>2</SB>O<SB>3</SB>film 42 and the thickness t3 of the AlN film 43 are set to satisfy t1<λ<(4×n1), t2<λ<(4×n2) and t3<λ<(4×n3), respectively. COPYRIGHT: (C)2009,JPO&INPIT
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