| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of forming a gate electrode well even on semiconductor layers different in film thickness. SOLUTION: This method is used for manufacturing the semiconductor device having field-effect transistors respectively formed on the semiconductor layers 3a and 3b different in film thickness on an insulator 2. First, the semiconductor layers 3a and 3b different in film thickness are formed on the insulator. Gate insulation films 5a and 5b are formed on the semiconductor layers 3a and 3b, respectively, and a gate electrode material is stacked on the gate insulation films 5a and 5b. A sacrifice film having a film thickness not to influence photolithography in patterning is formed on the gate electrode material, the sacrifice film is patterned by etching, and the gate electrode material is patterned by using the patterned sacrifice film 8a for a mask to form gate electrodes 11 and 12. COPYRIGHT: (C)2009,JPO&INPIT
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