| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such that the channel width of a MOSFET diode is efficiently widened and that use efficiency of a layout is improved, and a method of manufacturing the same. SOLUTION: The semiconductor device has an Si layer 5 formed on an Si substrate 1 with an insulating layer 3 interposed, a gate insulating film 13 formed on the Si layer 5, a gate electrode 15 formed on the gate insulating film 13 and having a first part which is annular in plan view, S/D layers 17 and 18 formed on inside and outside Si layers 5 at the first part, and wiring 31 connecting the S/D layer 18 and gate electrode 15 to each other. In such constitution, an annular channel region is formed on a Si layer 5 in an active region, for example, in a square or rectangular shape, and the channel width of the MOSFET diode is efficiently widened. COPYRIGHT: (C)2009,JPO&INPIT
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