| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents a second semiconductor layer from peeling and increases the area of the semiconductor layer, and the semiconductor device. SOLUTION: When a groove for removing a SiGe layer is formed by an SBSI method, an SOI layer 5 is formed in a shape having a first region 5a, a second region 5b and a third region 5c. Here, the first region 5a is sandwiched between supporter holes (h) in a Y direction in a plan view. The second region 5b is sandwiched between supporter holes (h) in the Y direction in the plan view, and disposed side by side with the first region 5a in an X direction. The third region 5c links the first region 5a and the second region 5b together in a state adjacent to grooves H in the plan view. In such a method, the second semiconductor layer is extended in the plan view without widening arrangement intervals of the grooves H. COPYRIGHT: (C)2009,JPO&INPIT
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