| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a nitride semiconductor laser using a non-polar or semi-polar wafer wherein orientation of a laser cavity can be performed easily. SOLUTION: After a substrate body 1 having a crystal 2 consisting of a hexagonal system gallium nitride semiconductor and a marker structure 3 is prepared, the substrate body 1 is cut along a plane intersecting the marker structure 3 to form a hexagonal system gallium nitride semiconductor wafer 5 having a first marker 7. Subsequently, a semiconductor lamination 20 including a gallium nitride based semiconductor layer and having a second marker 27 is formed. Thereafter, an insulating film 25 having an opening 25a aligned with the orientation of the second marker 27 is formed. Furthermore, an electrode 28 is formed on the insulating film 25 and the semiconductor lamination 20 thus forming a substrate product 40. The substrate product 40 is cleaved along a cleavage plane. COPYRIGHT: (C)2009,JPO&INPIT
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