| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability by suppressing the penetration of cracks from a sidewall of a semiconductor chip in dicing. SOLUTION: On an edge of the surface of a semiconductor chip region 10, a sealing ring 30 for crack stoppers is formed while surrounding an integrated circuit region 31. In the sealing ring 30 for crack stoppers, namely a laminated structure formed on a semiconductor substrate 11 outside the integrated circuit region 31, first, second, and third dummy metal layers 20, 21, 22 are laminated while sandwiching first, second, and third interlayer insulating films 12, 14, 16, respectively. The first, second, and third dummy metal layers 20, 21, 22 are electrically insulated from the semiconductor element and wiring of the integrated circuit region 31 by the first to third interlayer insulating films 12, 14, 16. COPYRIGHT: (C)2009,JPO&INPIT |
