发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A discharge hole of a lower nozzle is directed at an angle of 5 degrees to 40 degrees slanting inward with respect to a normal to the upper surface of a bottom plate. Thus, the flow pressure of a processing solution discharged through the discharge hole is not excessively reduced. Further, a circulation area of the processing solution does not expand widely in an inner bath. As a result, the processing solution in the inner bath is effectively displaced while the processing solution smoothly flows into gaps between substrates.
申请公布号 US2009239384(A1) 申请公布日期 2009.09.24
申请号 US20090369874 申请日期 2009.02.12
申请人 FUJIWARA KUNIO;HOSOKAWA AKIHIRO;TERASHIMA KOZO;OSAWA ATSUSHI 发明人 FUJIWARA KUNIO;HOSOKAWA AKIHIRO;TERASHIMA KOZO;OSAWA ATSUSHI
分类号 H01L21/306 主分类号 H01L21/306
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