SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF DIFFERENT FUNCTIONAL ELEMENTS AND METHOD OF MANUFACTURING THE SAME

摘要

At least first and second Si1-xGex (0<=x<=1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0<=x<=1) layers. A lattice constant of the first Si1-xGex (0<=x<=1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0<=x<=1) layer is matched with a lattice constant of the second material layer.