| 摘要 |
<p>The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.</p> |
