NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, NONVOLATILE MEMORY ARRAY, AND METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To simplify a structure of a nonvolatile semiconductor memory device.

SOLUTION: A floating gate 40 consisting of polysilicon is formed on a semiconductor substrate 20 through a gate insulating film 30. A sidewall insulating film 50 is provided on both sidewalls of the floating gate 40. A diffusion layer 60 is provided in the semiconductor substrate 20 and it is separated from the floating gate 40 by a predetermined distance. A diffusion layer 70 is provided in the semiconductor substrate 20 so as to overlap with the floating gate 40 in a channel width direction and in a channel length direction of a channel region. A high voltage is applied to the diffusion layer 70 which has capacitance coupling with the floating gate 40, so that electrons are injected into the floating gate 40.

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