| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device with a high-speed operating level shift circuit. SOLUTION: The device includes the level shift circuit 11, first and second current mirror circuits 12, 13 charging first and second output nodes Nout1, Nout2, first and second switch circuits 16, 19 operating the first and second current mirror circuits 12, 13, a fifth switch element 20 parallel-connected to an input side of the first current mirror circuit 12, driven with a second output signal Vout2 and bringing charge of the first output node Nout1 to a stop early when the first switch circuit 16 stops operation of the first current mirror circuit 12 and a sixth switch element 21 parallel-connected to an input side of the second current mirror circuit 13, driven with a first output signal Vout1 and bringing charge of the second output node Nout2 to a stop early when the second switch circuit 19 stops operation of the second current mirror circuit 13. COPYRIGHT: (C)2009,JPO&INPIT
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