ETCHING COMPOSITION FOR THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY

摘要

PROBLEM TO BE SOLVED: To provide a gate interconnection material thin etching composition for forming an excellent profile, for a thin-film transistor liquid crystal display. SOLUTION: The etching composition has the effect on etching an amorphous ITO forming pixel electrodes of the thin-film transistor liquid crystal display and an Mo/Al-Nd double film being a gate interconnection material forming a TFT by a single process with the use of the same composition without an undercut phenomenon of an Al-Nd being a lower film to obtain an excellent taper, and at the same time, has also the effect on forming an excellent profile of an Mo single film being a source/drain interconnection material. COPYRIGHT: (C)2009,JPO&INPIT