| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor memory element capable of preventing damage of etching by protecting a tunnel insulating film exposed upon a gate pattern etching process. SOLUTION: The method includes a step of preventing exposure of a tunnel insulating film 101 while permitting a first conductive film 102 to be left on the tunnel insulating film 101 although a gate pattern is formed by laminating on a semiconductor substrate 100 in succession, the tunnel insulating film 101, the first conductive film 102, a dielectric film 103, and second conductive films 104, 105 and by performing the etching; a step of removing impurities generated upon the etching process for forming a gate pattern by performing a washing process; a step of making the first conductive film 102 remaining on the tunnel insulating film 101 single crystal by performing ion implantation process; and a step of forming an oxide film 107 on a side wall of the gate pattern and simultaneously changing the first conductive film 101 to an insulating film 102a while performing an oxidation process. COPYRIGHT: (C)2009,JPO&INPIT
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