| 摘要 |
<p>A dielectric cap (100) and related methods are disclosed. In one embodiment, the dielectric cap (100) includes a dielectric material (108) having an optical band gap (e.g., greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons. The dielectric cap (100) exhibits a high modulus and is stable under post ULK UV curing treatments for, for example, copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.</p> |
