SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To improve a yield while suppressing increase of manufacturing cost, in a semiconductor device and manufacturing method thereof. SOLUTION: This semiconductor device includes: a silicon (semiconductor) substrate 1; an element separation insulation film 6 formed on the silicon substrate 1; a conductive pattern 13a formed on the silicon substrate 1 and the element separation insulation film 6, and having side surfaces 13e on the element separation insulation film 6; and an insulation film 16 formed on the element separation insulation film 6, the conductive pattern 13 and the side surfaces 13e of the conductive pattern 13a. Notches 13w are formed on the side surfaces 13e of the conductive pattern 13a. COPYRIGHT: (C)2009,JPO&INPIT