ANTIMONY PRECURSOR FOR GST FILM IN ALD/CVD PROCESSES

摘要

PROBLEM TO BE SOLVED: To provide a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition.

SOLUTION: In the process of making the germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, a silylantimony precursor is used as a source of antimony for the alloy film. New silylantimony compounds are also disclosed.

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