| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which can be manufactured by the minimum number of processes and has a stable characteristic and a high switching speed. SOLUTION: After forming a thick gate insulating film 9 and a gate insulating film 11 thinner than the film 9, a gate electrode material is deposited and a p-type impurity is ion-implanted to portions on which body areas are to be formed under the gate insulating film 9 to form the p-type impurity area 15. Then, the p-type impurity is respectively ion-implanted to portions under the gate insulating films 9, 11 to form respective body areas 19a, 19b. The body area 19a is integrated with the p-type impurity area 15. COPYRIGHT: (C)2009,JPO&INPIT
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