发明名称 |
Planarization of Gan by Photoresist Technique Using an Inductively Coupled Plasma |
摘要 |
Films of III-nitride for semiconductor device growth are planarized using an etch-back method. The method includes coating a III-nitride surface having surface roughness features in the micron range with a sacrificial planarization material such as an appropriately chose photoresist. The sacrificial planarization material is then etched together with the III-nitride roughness features using dry etch methods such as inductivel coupled plasma reactive ion etching. By closely matching the etch rates of the sacrificial planarization material and the III-nitride material, a planarized III-nitride surface is achieved. The etch-back process together with a high temperature annealing process yields a planarize III-nitride surface with surface roughness features reduced to the nm range. Planarized III-nitride, e.g., GaN, substrates and devices containing them are also provided.
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申请公布号 |
US2009236693(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20070223505 |
申请日期 |
2007.02.02 |
申请人 |
TRUSTEES OF BOSTON UNIVERSITY |
发明人 |
MOUSTAKAS THEODORE D.;WILLIAMS ADRIAN D. |
分类号 |
H01L31/0304;H01L21/3065;H01L21/66 |
主分类号 |
H01L31/0304 |
代理机构 |
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地址 |
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